Manufacturer Part Number
STGW40NC60KD
Manufacturer
STMicroelectronics
Introduction
High-power, high-speed IGBT transistor
Product Features and Performance
Optimized for high-frequency, high-efficiency power conversion applications
Robust and reliable design
Low conduction and switching losses
Fast switching capability
High current handling capacity
Wide operating temperature range
Product Advantages
Excellent thermal performance
Improved efficiency
Reduced system size and weight
Key Technical Parameters
Collector-Emitter Voltage (VCES): 600 V
Collector Current (IC): 70 A
Collector-Emitter Saturation Voltage (VCE(sat)): 2.7 V @ 15 V, 30 A
Reverse Recovery Time (trr): 45 ns
Gate Charge (Qg): 135 nC
Switching Energy (Eon/Eoff): 595 μJ/716 μJ
Quality and Safety Features
RoHS compliant
Designed to meet safety and reliability standards
Compatibility
Suitable for use in a variety of power conversion applications
Application Areas
Switch-mode power supplies
Motor drives
Uninterruptible power supplies (UPS)
Welding equipment
Industrial automation
Renewable energy systems
Product Lifecycle
This product is currently available and not nearing discontinuation
Replacement or upgrade options may be available in the future
Key Reasons to Choose This Product
High efficiency and power density
Robust and reliable performance
Fast switching capability for high-frequency applications
Excellent thermal management for improved system reliability
Compatibility with a wide range of power conversion applications
STGW40H65DFBSTMicroelectronicsIGBT 650V 80A 283W TO-247