Manufacturer Part Number
STGW40NC60WD
Manufacturer
STMicroelectronics
Introduction
IGBT (Insulated Gate Bipolar Transistor) power semiconductor device
Designed for high power, high frequency switching applications
Product Features and Performance
High power handling capability up to 250W
High voltage rating up to 600V
High current rating up to 70A continuous, 230A pulsed
Fast switching speed with low turn-on/off delays
Low on-state voltage drop of 2.5V at 30A
Low gate charge of 126nC
Wide operating temperature range of -55°C to 150°C
Product Advantages
Efficient power conversion and control
Reliable high-power switching
Compact and space-saving design
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 600V
Collector Current (Continuous/Pulsed): 70A/230A
On-state Voltage Drop: 2.5V @ 15V, 30A
Reverse Recovery Time: 45ns
Gate Charge: 126nC
Switching Energy: 302μJ (turn-on), 349μJ (turn-off)
Switching Delays: 33ns (turn-on), 168ns (turn-off)
Quality and Safety Features
RoHS3 compliant
Designed for high reliability and safety in power electronics applications
Compatibility
Compatible with standard IGBT gate drive circuits
Through-hole mounting in TO-247-3 package
Application Areas
Industrial motor drives
Power supplies
Renewable energy systems
Welding equipment
Induction heating
Uninterruptible power supplies (UPS)
Product Lifecycle
Currently in active production
No immediate plans for discontinuation
Replacements and upgrades may be available in the future
Several Key Reasons to Choose This Product
High power handling capability for efficient power conversion
Wide voltage and current ratings for versatile applications
Fast switching speed and low switching losses for high-frequency operation
Compact and reliable design for industrial-grade performance
RoHS3 compliance for environmentally-conscious applications
Compatible with standard IGBT gate drive circuits for easy integration
STGW40NC60WDKSTM
STGW40H65DFBSTMicroelectronicsIGBT 650V 80A 283W TO-247