Manufacturer Part Number
STGW40H120DF2
Manufacturer
STMicroelectronics
Introduction
High power discrete IGBT transistor
Product Features and Performance
Trench Field Stop IGBT technology
High current capability up to 80A
High voltage rating up to 1200V
Low on-state voltage drop
Fast switching performance
Optimized for hard switching applications
Product Advantages
Efficient power conversion
Reliable and robust design
Suitable for high power industrial applications
Key Technical Parameters
Collector-Emitter Voltage: 1200V
Collector Current: 80A
On-state Voltage Drop: 2.6V @ 15V, 40A
Reverse Recovery Time: 488ns
Gate Charge: 187nC
Operating Temperature: -55°C to 175°C
Quality and Safety Features
RoHS3 compliant
Housed in TO-247-3 package
Compatibility
Suitable for various industrial power conversion applications
Application Areas
Industrial motor drives
Welding equipment
Uninterruptible power supplies (UPS)
Induction heating
Renewable energy systems
Product Lifecycle
Active product
Replacement and upgrade options available
Key Reasons to Choose This Product
High power capability
Low power losses
Fast switching performance
Reliable and robust design
Suitable for demanding industrial applications