Manufacturer Part Number
STGW35HF60W
Manufacturer
STMicroelectronics
Introduction
High-power Insulated Gate Bipolar Transistor (IGBT)
Product Features and Performance
600V breakdown voltage
60A collector current
200W power rating
Low conduction losses
Fast switching speed
High reliability
Product Advantages
Suitable for high-power applications
Efficient power conversion
Robust and durable design
Key Technical Parameters
Collector-Emitter Voltage: 600V
Collector Current: 60A
Power Dissipation: 200W
Gate-Emitter Voltage: ±20V
Junction Temperature: -55°C to 150°C
Quality and Safety Features
ROHS3 compliant
Housed in a TO-247-3 package
Compatibility
Compatible with various high-power applications
Application Areas
Inverters
Servo drives
Welding equipment
Industrial motor control
Power supplies
Product Lifecycle
Currently in production
No plans for discontinuation
Replacement and upgrade options available
Key Reasons to Choose This Product
High performance and efficiency
Reliable and robust design
Suitable for a wide range of high-power applications
Easy to integrate and implement
Supported by a reputable manufacturer