Manufacturer Part Number
STGW30NC60KD
Manufacturer
STMicroelectronics
Introduction
Single IGBT Transistor
Product Features and Performance
600V Collector-Emitter Breakdown Voltage
60A Collector Current Rating
200W Power Rating
Fast Switching Speeds with 40ns Reverse Recovery Time
Low On-State Voltage Drop of 2.7V @ 15V, 20A
Wide Operating Temperature Range of -55°C to 150°C
Product Advantages
High Power Handling Capability
Low Power Losses
Reliable Performance
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 600V
Current Collector (Ic) (Max): 60A
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 20A
Reverse Recovery Time (trr): 40ns
Gate Charge: 96nC
Current Collector Pulsed (Icm): 125A
Switching Energy: 350J (on), 435J (off)
Td (on/off) @ 25°C: 29ns/120ns
Quality and Safety Features
RoHS3 Compliant
TO-247-3 Package for Reliable Thermal Performance
Compatibility
Compatible with Standard IGBT Gate Drivers
Application Areas
Power Supplies
Motor Drives
Inverters
Welding Equipment
Induction Heating
Product Lifecycle
Current active product
Replacements and upgrades available
Key Reasons to Choose This Product
High Power Handling Capability
Low Power Losses
Fast Switching Speeds
Wide Operating Temperature Range
Reliable Performance
RoHS Compliance
Compatibility with Standard Gate Drivers
STGW30NB60HDSTMicroelectronics