Manufacturer Part Number
STGW30NC60VD
Manufacturer
STMicroelectronics
Introduction
High-power insulated-gate bipolar transistor (IGBT)
Suitable for various power conversion applications
Product Features and Performance
600V IGBT with low conduction and switching losses
80A collector current rating
250W power rating
Fast switching performance with 44ns reverse recovery time
100nC gate charge for efficient gate drive
Product Advantages
Optimized for high-efficiency power conversion
Robust and reliable design for industrial applications
Easy and straightforward integration into power systems
Key Technical Parameters
Collector-Emitter Voltage (VCES): 600V
Collector Current (IC): 80A
Power Rating (Ptot): 250W
Reverse Recovery Time (trr): 44ns
Gate Charge (Qg): 100nC
Quality and Safety Features
RoHS3 compliant
Tested and qualified for industrial applications
Robust TO-247-3 package design
Compatibility
Suitable for various power conversion topologies, such as inverters, converters, and motor drives
Application Areas
Industrial power electronics
Renewable energy systems
Uninterruptible power supplies (UPS)
Motor drives and controls
Product Lifecycle
This product is an active and widely used IGBT from STMicroelectronics, with no plans for discontinuation.
Replacement or upgrade options are available from the manufacturer as technology evolves.
Key Reasons to Choose This Product
Excellent performance-to-cost ratio for power conversion applications
Robust and reliable design for industrial environments
Easy integration into power system designs
Extensive technical support and product lifecycle management from STMicroelectronics