Manufacturer Part Number
STGW30NC120HD
Manufacturer
STMicroelectronics
Introduction
High-power insulated-gate bipolar transistor (IGBT)
Product Features and Performance
High power handling capability up to 220W
Low on-state voltage drop
Fast switching speed
Robust design for high reliability
Product Advantages
Efficient power conversion
Compact and easy to integrate
Reliable performance
Key Technical Parameters
Voltage rating: 1200V
Current rating: 60A
Low Vce(on): 2.75V @ 15V, 20A
Fast reverse recovery time: 152ns
Gate charge: 110nC
Switching energy: 1.66mJ (on), 4.44mJ (off)
Wide operating temperature range: -55°C to 150°C
Quality and Safety Features
RoHS3 compliant
Robust TO-247-3 package
Compatibility
Can be used in a variety of power conversion and motor control applications
Application Areas
Industrial motor drives
Power supplies
Welding equipment
Uninterruptible power supplies (UPS)
Renewable energy systems
Product Lifecycle
This product is currently in active production and there are no plans for discontinuation. Replacement or upgrade options are available if needed.
Key Reasons to Choose This Product
High power handling capability
Efficient power conversion with low losses
Fast and reliable switching performance
Robust and reliable design for demanding applications
Wide operating temperature range
Easy to integrate into existing systems
