Manufacturer Part Number
STGW35HF60WDI
Manufacturer
STMicroelectronics
Introduction
High-power insulated-gate bipolar transistor (IGBT)
Designed for industrial motor drives, home appliances, and power conversion applications
Product Features and Performance
High power handling capability up to 200W
Voltage rating up to 600V
Current rating up to 60A
Fast switching with reverse recovery time of 85ns
Low on-state voltage drop of 2.5V at 20A
Wide operating temperature range of -55°C to 150°C
Product Advantages
Efficient power conversion
Reliable high-power operation
Compact and robust design
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 600V
Collector Current (max): 60A
Gate Charge: 140nC
Switching Energy (turn-off): 185μJ
Quality and Safety Features
RoHS3 compliant
TO-247-3 package for reliable thermal and mechanical performance
Compatibility
Suitable for industrial motor drives, home appliances, power conversion, and other high-power applications
Application Areas
Industrial motor drives
Power inverters and converters
Home appliances
Uninterruptible power supplies (UPS)
Welding equipment
Product Lifecycle
Current production model, no discontinuation planned
Replacement or upgrade options available from STMicroelectronics
Key Reasons to Choose This Product
High power handling and voltage capability
Fast and efficient switching performance
Reliable and robust design for industrial applications
Compatibility with a wide range of high-power systems
Availability of technical support and product life-cycle management from STMicroelectronics