Manufacturer Part Number
STGW40H120F2
Manufacturer
STMicroelectronics
Introduction
High-power discrete IGBT transistor for industrial applications
Product Features and Performance
Trench Field Stop IGBT technology
1200V collector-emitter breakdown voltage
80A maximum collector current
6V maximum collector-emitter saturation voltage @ 40A, 15V gate-emitter voltage
158nC gate charge
160A maximum pulsed collector current
18ns/152ns typical turn-on/turn-off delay times
Product Advantages
Excellent switching performance
High power density
Reliable and robust design
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 1200V
Current Collector (Ic) (Max): 80A
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
Gate Charge: 158nC
Current Collector Pulsed (Icm): 160A
Td (on/off) @ 25°C: 18ns/152ns
Quality and Safety Features
ROHS3 compliant
Operating temperature range: -55°C to 175°C
Compatibility
TO-247-3 package
Application Areas
Industrial motor drives
Power supplies
Welding equipment
Induction heating
Other high-power industrial applications
Product Lifecycle
Currently in production
Replacement and upgrade options available
Key Reasons to Choose This Product
Excellent switching performance for high-power applications
High current and voltage handling capabilities
Robust and reliable design for industrial environments
Compact and efficient TO-247-3 package
Long operating temperature range
Widely compatible with industrial equipment
STGW35NC60WDSTMicroelectronicsIGBT 600V 70A 260W TO247