Manufacturer Part Number
STGW40H60DLFB
Manufacturer
STMicroelectronics
Introduction
High-power insulated-gate bipolar transistor (IGBT) in a TO-247 package
Product Features and Performance
Trench Field Stop IGBT technology
600V collector-emitter breakdown voltage
80A maximum collector current
283W maximum power dissipation
210nC gate charge
160A maximum pulsed collector current
142ns turn-off time
Product Advantages
High power density
Low on-state voltage drop
Fast switching
Robust design
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 600V
Current Collector (Ic) (Max): 80A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Gate Charge: 210nC
Current Collector Pulsed (Icm): 160A
Td (on/off) @ 25°C: -/142ns
Quality and Safety Features
ROHS3 Compliant
Operating Temperature: -55°C to 175°C
Compatibility
Supports TO-247-3 package
Suitable for through-hole mounting
Application Areas
Power electronics
Industrial motor drives
Renewable energy systems
Welding equipment
UPS and SMPS
Product Lifecycle
This product is currently available and not nearing discontinuation.
Replacements and upgrades may be available from the manufacturer.
Key Reasons to Choose This Product
High power density and efficiency
Fast switching speed for high-frequency applications
Robust design for reliable operation
Wide operating temperature range
Easy integration with through-hole mounting
STGW40H65DFBSTMicroelectronicsIGBT 650V 80A 283W TO-247