Manufacturer Part Number
STGW40H65FB
Manufacturer
STMicroelectronics
Introduction
High-power insulated-gate bipolar transistor (IGBT) for industrial and power supply applications
Product Features and Performance
Trench field stop IGBT technology
High power density
Low conduction and switching losses
Fast switching speed
Wide safe operating area (SOA)
High reliability and ruggedness
Product Advantages
Efficient power conversion
Compact design
Improved system reliability
Flexible application
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 650 V
Current Collector (Ic) (Max): 80 A
Vce(on) (Max) @ Vge, Ic: 2.3 V @ 15 V, 40 A
Gate Charge: 210 nC
Current Collector Pulsed (Icm): 160 A
Switching Energy: 498 mJ (on), 363 mJ (off)
Td (on/off) @ 25°C: 40 ns/142 ns
Quality and Safety Features
RoHS3 compliant
Robust and reliable design
Designed to meet industrial safety standards
Compatibility
TO-247-3 package
Suitable for a wide range of industrial and power supply applications
Application Areas
Industrial motor drives
Power supplies
Inverters
Welding equipment
Induction heating
Other high-power applications
Product Lifecycle
Currently in active production
No known plans for discontinuation
Replacement and upgrade options available
Key Reasons to Choose This Product
Efficient power conversion with low losses
Compact and reliable design
Flexible application in various industrial and power supply systems
Proven performance and quality
STGW35NC120HDSTMicroelectronicsIGBT 1200V 60A 235W TO247