Manufacturer Part Number
STGW40H65DFB
Manufacturer
STMicroelectronics
Introduction
High-power insulated-gate bipolar transistor (IGBT) for industrial applications
Product Features and Performance
Trench Field Stop IGBT technology
High voltage rating up to 650V
High current rating up to 80A
Low collector-emitter saturation voltage (Vce(on))
Fast switching with short turn-on and turn-off delays
High power density and efficiency
Product Advantages
Suitable for high-power industrial applications
Excellent electrical and thermal performance
Robust and reliable design
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 650V
Current Collector (Ic) (Max): 80A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Reverse Recovery Time (trr): 62ns
Gate Charge: 210nC
Switching Energy: 498J (on), 363J (off)
Quality and Safety Features
RoHS3 compliant
Suitable for high-temperature operation up to 175°C
Compatibility
Standard TO-247 package
Suitable for various industrial power conversion and control applications
Application Areas
Industrial motor drives
Power supplies
Welding equipment
Induction heating
Uninterruptible power supplies (UPS)
Renewable energy systems
Product Lifecycle
Currently in production
Replacements or upgrades may be available in the future
Key Reasons to Choose This Product
High power density and efficiency
Excellent electrical and thermal performance
Robust and reliable design
Suitable for high-power industrial applications
Compatibility with standard TO-247 package
