Manufacturer Part Number
STGW40M120DF3
Manufacturer
STMicroelectronics
Introduction
High-performance insulated-gate bipolar transistor (IGBT) designed for industrial and consumer applications.
Product Features and Performance
Trench field stop IGBT technology
Optimized for high-efficiency and high-frequency switching
Low on-state voltage drop and fast switching
High power density and ruggedness
Product Advantages
Efficient and reliable power conversion
Compact design
Easy integration into power systems
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 1200 V
Current Collector (Ic) (Max): 80 A
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Reverse Recovery Time (trr): 355 ns
Gate Charge: 125 nC
Current Collector Pulsed (Icm): 160 A
Switching Energy: 1.5mJ (on), 2.25mJ (off)
Td (on/off) @ 25°C: 35ns/140ns
Quality and Safety Features
RoHS3 compliant
Designed for industrial and consumer applications
Wide operating temperature range: -55°C to 175°C
Compatibility
TO-247-3 package
Suitable for a variety of power conversion and motor control applications
Application Areas
Industrial motor drives
Home appliances
Power supplies
Welding equipment
Renewable energy systems
Product Lifecycle
Currently in active production
Replacement or upgrade options available from STMicroelectronics
Key Reasons to Choose This Product
High efficiency and power density
Fast, reliable, and rugged performance
Optimized for high-frequency switching
Easy integration into power systems
Wide range of industrial and consumer applications
