Manufacturer Part Number
STGW39NC60VD
Manufacturer
STMicroelectronics
Introduction
High power density N-channel IGBT in a TO-247 package
Product Features and Performance
Power rating up to 250W
Collector-Emitter voltage up to 600V
Collector current up to 80A
Low on-state voltage drop of 2.4V @ 30A, 15V
Fast switching with turn-on time of 33ns and turn-off time of 178ns
Low switching losses of 333μJ (turn-on) and 537μJ (turn-off)
Product Advantages
Optimized for high frequency and high efficiency applications
Rugged and reliable design
Excellent performance-to-cost ratio
Key Technical Parameters
Collector-Emitter Voltage (VCES): 600V
Collector Current (IC): 80A
Collector-Emitter Saturation Voltage (VCE(sat)): 2.4V @ 15V, 30A
Reverse Recovery Time (trr): 45ns
Gate Charge (Qg): 126nC
Quality and Safety Features
RoHS3 compliant
TO-247-3 package for high power handling and good thermal dissipation
Compatibility
Compatible with standard IGBT gate drive circuits
Application Areas
Induction heating
Motor drives
Power supplies
Welding equipment
Renewable energy systems
Product Lifecycle
Current model, no plans for discontinuation
Replacement or upgrade options available from STMicroelectronics
Key Reasons to Choose This Product
High power density and efficiency
Excellent switching performance
Rugged and reliable design
Optimized for high frequency and high efficiency applications
Good value for the performance
STGW33IH120DISTMicroelectronics