Manufacturer Part Number
STGW35HF60WD
Manufacturer
STMicroelectronics
Introduction
Single Insulated Gate Bipolar Transistor (IGBT)
Product Features and Performance
600V IGBT
60A Collector Current
200W Power Dissipation
Low Vce(on) of 2.5V @ 15V, 20A
Fast Switching with 50ns Reverse Recovery Time
140nC Gate Charge
150A Pulsed Collector Current
Wide Operating Temperature Range of -55°C to 150°C
Product Advantages
High Efficiency
Fast Switching
High Power Density
Reliable Performance
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 600V
Current Collector (Ic) (Max): 60A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Reverse Recovery Time (trr): 50ns
Gate Charge: 140nC
Current Collector Pulsed (Icm): 150A
Switching Energy: 290J (on), 185J (off)
Td (on/off) @ 25°C: 30ns/175ns
Quality and Safety Features
ROHS3 Compliant
TO-247-3 Package
Compatibility
Through Hole Mounting
Application Areas
Power Supplies
Motor Drives
Industrial Electronics
Renewable Energy Systems
Product Lifecycle
Currently available
No indication of discontinuation
Several Key Reasons to Choose This Product
High power density and efficiency
Fast switching capability
Reliable and robust performance
Wide operating temperature range
RoHS compliance for environmental sustainability
