Manufacturer Part Number
STGW30NC60WD
Manufacturer
STMicroelectronics
Introduction
Discrete Semiconductor Product - Transistors - IGBTs - Single
Product Features and Performance
RoHS3 compliant
TO-247-3 package
PowerMESH series
Operating temperature range: -55°C to 150°C (TJ)
Maximum power: 200W
Maximum collector-emitter breakdown voltage: 600V
Maximum collector current: 60A
Maximum collector-emitter saturation voltage: 2.5V @ 15V, 20A
Reverse recovery time: 40ns
Gate charge: 102nC
Maximum pulsed collector current: 150A
Switching energy: 305J (on), 181J (off)
Turn-on/off delay time: 29.5ns/118ns
Product Advantages
High power handling capability
Fast switching performance
Low conduction and switching losses
Suitable for high-frequency, high-power applications
Key Technical Parameters
Collector-emitter breakdown voltage: 600V
Collector current: 60A
Collector-emitter saturation voltage: 2.5V
Reverse recovery time: 40ns
Gate charge: 102nC
Pulsed collector current: 150A
Switching energy: 305J (on), 181J (off)
Turn-on/off delay time: 29.5ns/118ns
Quality and Safety Features
RoHS3 compliant
Through-hole mounting
Compatibility
Standard IGBT input type
Application Areas
High-frequency, high-power applications
Switching power supplies
Motor drives
Induction heating
Uninterruptible power supplies (UPS)
Product Lifecycle
Current product, no discontinuation or replacement information available
Key Reasons to Choose This Product
High power handling capability up to 200W
Fast switching performance with low conduction and switching losses
Suitable for high-frequency, high-power applications
RoHS3 compliant and through-hole mounting for reliable operation
STGW30NB60HDSTMicroelectronics