Manufacturer Part Number
STGW30H60DFB
Manufacturer
STMicroelectronics
Introduction
High-voltage, high-performance IGBT transistor in a TO-247 package.
Product Features and Performance
600V collector-emitter breakdown voltage
60A collector current rating
Low Vce(on) of 2V @ 15V, 30A
Fast switching with 53ns reverse recovery time
High power handling capability up to 260W
Trench field-stop IGBT technology
Product Advantages
Excellent electrical performance for high-power applications
Compact and robust TO-247 package
Suitable for industrial motor drives, power supplies, and other high-power systems
Key Technical Parameters
Operating temperature range: -55°C to 175°C
Collector-emitter breakdown voltage: 600V
Collector current (max): 60A
On-state voltage drop (max): 2V @ 15V, 30A
Reverse recovery time: 53ns
Gate charge: 149nC
Switching energy: 383J (on), 293J (off)
Switching delay times: 37ns (turn-on), 146ns (turn-off)
Quality and Safety Features
RoHS3 compliant
Reliable and durable through-hole mounting
Compatibility
Suitable for a wide range of industrial and power electronics applications
Application Areas
Industrial motor drives
Power supplies
Inverters
Welding equipment
Induction heating systems
Other high-power electronic systems
Product Lifecycle
This product is actively supported and not nearing discontinuation.
Replacement and upgrade options are available from the manufacturer.
Key Reasons to Choose This Product
Excellent electrical performance with low Vce(on) and fast switching
High power handling capability up to 260W
Robust and reliable TO-247 package
Suitable for a wide range of high-power industrial and electronics applications
Supported by the manufacturer with replacement and upgrade options available
STGW30M65DF2STMicroelectronics