Manufacturer Part Number
STGW20NC60V
Manufacturer
STMicroelectronics
Introduction
High-voltage, high-current IGBT (Insulated Gate Bipolar Transistor) power semiconductor device
Product Features and Performance
Operates at high voltages up to 600V
Capable of handling high currents up to 60A
Efficient power switching with low on-state voltage drop
Fast switching characteristics with low switching losses
Robust design for high reliability and ruggedness
Suitable for a wide range of power conversion applications
Product Advantages
Excellent power handling capability
High-speed switching for efficient power conversion
Reliable and durable performance
Versatile application suitability
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 600V
Collector Current (Max): 60A
On-state Voltage (Vce(on)): 2.5V @ 15V, 20A
Gate Charge: 100nC
Collector Current Pulsed: 100A
Switching Times (td(on)/td(off)): 31ns/100ns
Quality and Safety Features
RoHS3 compliant for environmental friendliness
Designed and manufactured to high quality standards
Protections against overcurrent, overvoltage, and overtemperature
Compatibility
TO-247-3 package for easy integration into power electronics designs
Application Areas
Inverters
Converters
Motor drives
Power supplies
Welding equipment
Induction heating systems
Product Lifecycle
The STGW20NC60V is an active and currently available product from STMicroelectronics.
Replacement or upgrade options may be available as technology evolves.
Key Reasons to Choose This Product
High power handling capability for demanding applications
Efficient and fast switching performance for improved energy efficiency
Reliable and durable design for long-term, robust operation
Compatibility with standard power electronics packaging and circuitry
Suitability for a wide range of power conversion and motor control applications
STGW20NB60HDSTMicroelectronics