Manufacturer Part Number
STGW15M120DF3
Manufacturer
STMicroelectronics
Introduction
High-power IGBT (Insulated Gate Bipolar Transistor) designed for industrial applications.
Product Features and Performance
Trench Field Stop IGBT technology
Collector-Emitter Breakdown Voltage of 1200V
Collector Current (Ic) of 30A
Low Vce(on) of 2.3V @ 15V, 15A
Fast Reverse Recovery Time (trr) of 270ns
Gate Charge of 226nC
Pulsed Collector Current (Icm) of 60A
Switching Energy of 550J (on) and 850J (off)
Turn-on and Turn-off Delay Times of 26ns and 122ns respectively
Product Advantages
Excellent performance for industrial motor drives and power conversion applications
Robust design with high ruggedness and reliability
Optimized for efficient and high-power switching
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 1200V
Current Collector (Ic) (Max): 30A
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 15A
Reverse Recovery Time (trr): 270ns
Gate Charge: 226nC
Current Collector Pulsed (Icm): 60A
Switching Energy: 550J (on), 850J (off)
Td (on/off) @ 25°C: 26ns/122ns
Quality and Safety Features
RoHS3 compliant
TO-247 package for robust mechanical and thermal performance
Compatibility
Suitable for a wide range of industrial applications, including motor drives, power conversion, and power electronics
Application Areas
Industrial motor drives
Power conversion systems
Power electronics
Product Lifecycle
Current product, not nearing discontinuation
Replacement parts and upgrades available
Key Reasons to Choose This Product
Excellent performance characteristics for high-power, high-efficiency applications
Robust and reliable design with high ruggedness
Optimized for efficient switching in industrial environments
RoHS3 compliance for environmental sustainability
Wide range of compatible applications
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