Manufacturer Part Number
STGW19NC60WD
Manufacturer
STMicroelectronics
Introduction
High-performance IGBT transistor
Product Features and Performance
High voltage (600V) and high current (42A) capability
Low on-state voltage (Vce(on) = 2.5V)
Fast switching (Turn-on: 25ns, Turn-off: 90ns)
Low switching losses (81J on, 125J off)
Wide operating temperature range (-55°C to 150°C)
Product Advantages
Efficient power conversion
Reliable performance
Compact and easy to integrate
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 600 V
Current Collector (Ic) (Max): 42 A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 12A
Reverse Recovery Time (trr): 31 ns
Gate Charge: 53 nC
Switching Energy: 81J (on), 125J (off)
Td (on/off) @ 25°C: 25ns/90ns
Quality and Safety Features
RoHS3 compliant
Reliable TO-247-3 package
Compatibility
Suitable for a wide range of power conversion applications
Application Areas
Inverters
Motor drives
Power supplies
Industrial equipment
Product Lifecycle
This product is currently available and not nearing discontinuation.
Replacements and upgrades may be available in the future.
Key Reasons to Choose This Product
High voltage and current capability for efficient power conversion
Fast switching and low losses for improved energy efficiency
Wide operating temperature range for reliable performance
Compact and easy to integrate design
Compliant with RoHS regulations for environmental responsibility
STGW20IH125DFSTMicroelectronics