Manufacturer Part Number
STGPL6NC60D
Manufacturer
STMicroelectronics
Introduction
High-performance, high-power IGBT transistor for industrial and consumer applications
Product Features and Performance
600V collector-emitter breakdown voltage
14A continuous collector current
18A pulsed collector current
9V max collector-emitter saturation voltage
50ns reverse recovery time
12nC gate charge
Wide operating temperature range of -55°C to 150°C
Product Advantages
Superior switching performance
High power handling capability
Compact TO-220 package
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 600V
Current Collector (Ic) (Max): 14A
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 3A
Reverse Recovery Time (trr): 50ns
Gate Charge: 12nC
Current Collector Pulsed (Icm): 18A
Switching Energy: 46.5J (on), 23.5J (off)
Td (on/off) @ 25°C: 6.7ns/46ns
Quality and Safety Features
RoHS3 compliant
Suitable for industrial and consumer applications
Compatibility
Can be used as a replacement or upgrade for similar IGBT transistors in various power electronic circuits
Application Areas
Industrial motor drives
Power supplies
Induction heating
Welding equipment
Home appliances
Product Lifecycle
Currently in active production
No plans for discontinuation or replacement at this time
Key Reasons to Choose This Product
Excellent switching performance for high-power applications
High current and voltage handling capabilities
Compact and easy-to-use TO-220 package
Wide operating temperature range
RoHS3 compliance for environmentally-friendly use