STGP7NC60HD - STMicroelectronics

Manufacturer Part Number

STGP7NC60HD

Manufacturer

STMicroelectronics

Introduction

STGP7NC60HD is a discrete semiconductor product, specifically an Insulated-Gate Bipolar Transistor (IGBT) in a single transistor configuration.

Product Features and Performance

Operating temperature range: -55°C to 150°C

Maximum power: 80W

Collector-Emitter Breakdown Voltage (Max): 600V

Collector Current (Max): 25A

Collector-Emitter Saturation Voltage (Max): 2.5V @ 15V, 7A

Reverse Recovery Time: 37ns

Gate Charge: 35nC

Pulsed Collector Current (Max): 50A

Switching Energy: 95J (on), 115J (off)

Turn-on/off Delay Time @ 25°C: 18.5ns/72ns

Product Advantages

High voltage and current handling capability

Fast switching speed

Low on-state voltage

Compact TO-220 package

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 600V

Current Collector (Max): 25A

Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 7A

Reverse Recovery Time (trr): 37ns

Gate Charge: 35nC

Current Collector Pulsed (Max): 50A

Switching Energy: 95J (on), 115J (off)

Td (on/off) @ 25°C: 18.5ns/72ns

Quality and Safety Features

RoHS3 compliant

TO-220 package

Compatibility

Compatible with various electronic circuits and power conversion applications

Application Areas

Power electronics

Motor drives

Inverters

Converters

Industrial equipment

Renewable energy systems

Product Lifecycle

This product is currently available and not nearing discontinuation.

Replacement or upgraded products may be available in the future.

Key Reasons to Choose This Product

High voltage and current handling capability for demanding applications

Fast switching speed for efficient power conversion

Low on-state voltage for reduced power losses

Compact and reliable TO-220 package

RoHS3 compliance for environmental safety

Compatibility with a wide range of electronic circuits and power conversion applications