Manufacturer Part Number
STGP7NC60HD
Manufacturer
STMicroelectronics
Introduction
STGP7NC60HD is a discrete semiconductor product, specifically an Insulated-Gate Bipolar Transistor (IGBT) in a single transistor configuration.
Product Features and Performance
Operating temperature range: -55°C to 150°C
Maximum power: 80W
Collector-Emitter Breakdown Voltage (Max): 600V
Collector Current (Max): 25A
Collector-Emitter Saturation Voltage (Max): 2.5V @ 15V, 7A
Reverse Recovery Time: 37ns
Gate Charge: 35nC
Pulsed Collector Current (Max): 50A
Switching Energy: 95J (on), 115J (off)
Turn-on/off Delay Time @ 25°C: 18.5ns/72ns
Product Advantages
High voltage and current handling capability
Fast switching speed
Low on-state voltage
Compact TO-220 package
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 600V
Current Collector (Max): 25A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 7A
Reverse Recovery Time (trr): 37ns
Gate Charge: 35nC
Current Collector Pulsed (Max): 50A
Switching Energy: 95J (on), 115J (off)
Td (on/off) @ 25°C: 18.5ns/72ns
Quality and Safety Features
RoHS3 compliant
TO-220 package
Compatibility
Compatible with various electronic circuits and power conversion applications
Application Areas
Power electronics
Motor drives
Inverters
Converters
Industrial equipment
Renewable energy systems
Product Lifecycle
This product is currently available and not nearing discontinuation.
Replacement or upgraded products may be available in the future.
Key Reasons to Choose This Product
High voltage and current handling capability for demanding applications
Fast switching speed for efficient power conversion
Low on-state voltage for reduced power losses
Compact and reliable TO-220 package
RoHS3 compliance for environmental safety
Compatibility with a wide range of electronic circuits and power conversion applications
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