Manufacturer Part Number
STGP5H60DF
Manufacturer
STMicroelectronics
Introduction
Discrete Semiconductor Products
Transistors IGBTs Single
Product Features and Performance
ROHS3 Compliant
TO-220 package
Operating Temperature: -55°C ~ 175°C (TJ)
Power Rating: 88 W
IGBT Type: Trench Field Stop
Collector-Emitter Breakdown Voltage (Max): 600 V
Collector Current (Max): 10 A
Collector-Emitter Saturation Voltage (Max): 1.95 V @ 15V, 5A
Reverse Recovery Time: 134.5 ns
Gate Charge: 43 nC
Collector Current Pulsed (Max): 20 A
Switching Energy: 56 J (on), 78.5 J (off)
Turn-On/Turn-Off Delay Time @ 25°C: 30 ns / 140 ns
Product Advantages
High power handling capability
Fast switching speed
Low conduction losses
Robust and reliable performance
Key Technical Parameters
Collector-Emitter Breakdown Voltage
Collector Current
Collector-Emitter Saturation Voltage
Reverse Recovery Time
Gate Charge
Switching Energy
Delay Time
Quality and Safety Features
ROHS3 Compliant
Suitable for high-temperature operation
Compatibility
Through-hole mounting
Application Areas
Power electronics
Motor drives
Inverters
Switching power supplies
Product Lifecycle
Current product
Replacements and upgrades may be available
Key Reasons to Choose This Product
High power handling capacity
Fast switching speed for efficient operation
Low conduction losses for improved efficiency
Robust and reliable performance for demanding applications
Suitable for high-temperature environments
STGP3HF60HDSTMicroelectronicsIGBT BIPO 600V 3A TO220