Manufacturer Part Number
STGP30H60DF
Manufacturer
STMicroelectronics
Introduction
Discrete Semiconductor Product
Transistors IGBTs Single
Product Features and Performance
RoHS3 Compliant
TO-220 Package
Through Hole Mounting
Operating Temperature: -40°C to 175°C
Power Rating: 260W
IGBT Type: Trench Field Stop
Collector-Emitter Breakdown Voltage: 600V
Collector Current (Max): 60A
Collector-Emitter Saturation Voltage (Max): 2.4V @ 15V, 30A
Reverse Recovery Time: 110ns
Gate Charge: 105nC
Collector Current (Pulsed, Max): 120A
Switching Energy: 350J (on), 400J (off)
Turn-on/off Delay Time: 50ns/160ns
Product Advantages
High power rating
Low saturation voltage
Fast switching capabilities
Key Technical Parameters
Collector-Emitter Breakdown Voltage
Collector Current
Collector-Emitter Saturation Voltage
Reverse Recovery Time
Gate Charge
Switching Energy
Switching Delay Times
Quality and Safety Features
RoHS3 Compliant
Suitable for high-temperature environments
Compatibility
Through Hole Mounting
TO-220 Package
Application Areas
Power electronics
Industrial control
Renewable energy systems
Product Lifecycle
Current product
Availability of replacements and upgrades may vary
Key Reasons to Choose
High power handling
Low losses
Fast switching
Compatibility with common applications