Manufacturer Part Number
STGP20V60DF
Manufacturer
STMicroelectronics
Introduction
High-performance IGBT (Insulated Gate Bipolar Transistor) for industrial and automotive applications
Product Features and Performance
Trench Field Stop IGBT technology
Low conduction and switching losses
Fast switching speed
High robustness and reliability
Product Advantages
Efficient power conversion
Improved energy efficiency
Compact and reliable design
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 600 V
Current Collector (Ic) (Max): 40 A
Vce(on) (Max) @ Vge, Ic: 2.2 V @ 15 V, 20 A
Reverse Recovery Time (trr): 40 ns
Gate Charge: 116 nC
Current Collector Pulsed (Icm): 80 A
Switching Energy: 200 J (on), 130 J (off)
Td (on/off) @ 25°C: 38 ns / 149 ns
Quality and Safety Features
RoHS3 compliant
Robust TO-220 package
Compatibility
Compatible with various industrial and automotive applications
Application Areas
Motor drives
Power inverters
Switched-mode power supplies
Induction heating
Welding equipment
Product Lifecycle
This product is currently actively available and supported by the manufacturer.
Several Key Reasons to Choose This Product
High efficiency and low losses for improved energy savings
Fast switching capabilities for high-frequency applications
Robust and reliable design for industrial and automotive use
RoHS compliance for environmental sustainability
Compatibility with a wide range of power conversion applications