STGP19NC60KD - STMicroelectronics

Manufacturer Part Number

STGP19NC60KD

Manufacturer

STMicroelectronics

Introduction

This product is a discrete semiconductor device, specifically an Insulated-Gate Bipolar Transistor (IGBT) in a single package.

Product Features and Performance

Low conduction losses and fast switching

600V Collector-Emitter Breakdown Voltage

35A Continuous Collector Current

75V Collector-Emitter Saturation Voltage @ 12A

31ns Reverse Recovery Time

55nC Gate Charge

75A Pulsed Collector Current

165μJ Turn-On Switching Energy, 255μJ Turn-Off Switching Energy

30ns Turn-On Delay Time, 105ns Turn-Off Delay Time

Product Advantages

Efficient power conversion and control

Compact and easy to integrate

Reliable and robust performance

Key Technical Parameters

Power Rating: 125W

Operating Temperature Range: -55°C to 150°C

Package: TO-220-3

Quality and Safety Features

RoHS3 compliant

Designed and manufactured to high quality standards

Compatibility

This IGBT is compatible with various power electronics and motor control applications.

Application Areas

Power supplies

Motor drives

Inverters

Industrial control systems

Product Lifecycle

This product is an active and widely available IGBT solution. Replacements and upgrades may be available from STMicroelectronics or other manufacturers.

Key Reasons to Choose This Product

High efficiency and low losses for improved system performance

Robust and reliable design for long-term operation

Compact and easy to integrate into various applications

Extensive technical parameters and data available for design optimization

Compliance with key safety and environmental regulations