STGP10NB60SD - STMicroelectronics

Manufacturer Part Number

STGP10NB60SD

Manufacturer

STMicroelectronics

Introduction

Discrete Semiconductor Product

Transistors IGBTs Single

Product Features and Performance

RoHS3 Compliant

TO-220 Package

PowerMESH Series

Tube Packaging

Operating Temperature: -55°C to 150°C (TJ)

Power Rating: 80 W (Max)

Collector-Emitter Breakdown Voltage: 600 V (Max)

Collector Current: 29 A (Max)

Collector-Emitter Saturation Voltage: 1.75 V @ 15 V, 10 A

Reverse Recovery Time: 37 ns

Gate Charge: 33 nC

Pulsed Collector Current: 80 A

Switching Energy: 600 mJ (on), 5 mJ (off)

Turn-on/Turn-off Delay Time @ 25°C: 700 ns / 1.2 μs

Product Advantages

High power handling capability

Low on-state voltage

Fast switching performance

Reliable and robust design

Key Technical Parameters

Power Rating

Voltage Rating

Current Rating

Switching Characteristics

Quality and Safety Features

RoHS3 Compliant

Through-hole mounting

Compatibility

Compatible with standard IGBT applications

Application Areas

Power supplies

Motor drives

Inverters

Welding equipment

Industrial automation

Product Lifecycle

Currently available

No discontinuation or replacement information available

Key Reasons to Choose This Product

High power handling

Low on-state voltage

Fast switching performance

Reliable and robust design

RoHS3 compliance

Through-hole mounting for easy installation