Manufacturer Part Number
STGP10H60DF
Manufacturer
STMicroelectronics
Introduction
High-power single IGBT transistor
Product Features and Performance
Trench field stop technology
600V collector-emitter breakdown voltage
20A maximum collector current
95V maximum collector-emitter saturation voltage at 15V gate voltage, 10A collector current
107ns reverse recovery time
57nC gate charge
40A maximum pulsed collector current
83J turn-on, 140J turn-off switching energy
5ns turn-on, 103ns turn-off delay times at 25°C
Product Advantages
Efficient power conversion
Reliable high-power switching
Compact through-hole TO-220 package
Key Technical Parameters
Operating temperature range: -55°C to 175°C
Power dissipation: 115W
RoHS compliant
Quality and Safety Features
RoHS3 compliant
Compatibility
Through-hole TO-220 package
Application Areas
Power conversion
Inverters
Welding equipment
Motor drives
Uninterruptible power supplies (UPS)
Product Lifecycle
Currently in production. Replacements and upgrades may be available in the future.
Key Reasons to Choose This Product
High power handling capability
Fast switching performance
Reliable trench field stop IGBT technology
Compact and easy to mount TO-220 package
Wide operating temperature range
RoHS compliance for environmental friendliness