Manufacturer Part Number
STGP10NC60KD
Manufacturer
STMicroelectronics
Introduction
Discrete Semiconductor Product
Transistors IGBTs Single
Product Features and Performance
RoHS3 Compliant
TO-220 Package
PowerMESH Series
Operating Temperature: -55°C to 150°C
Power Capacity: 65W
Collector-Emitter Breakdown Voltage: 600V
Collector Current (Max): 20A
Collector-Emitter Saturation Voltage (Max): 2.5V @ 15V, 5A
Reverse Recovery Time: 22ns
Gate Charge: 19nC
Pulsed Collector Current (Max): 30A
Switching Energy (On/Off): 55μJ/85μJ
Turn-on/Turn-off Delay Time: 17ns/72ns
Product Advantages
High-performance IGBT for efficient power conversion
Optimized for fast switching applications
Compact TO-220 package for easy integration
Key Technical Parameters
Voltage, Current, Charge, Time, Power Ratings
Quality and Safety Features
RoHS3 Compliant
Reliable operation within wide temperature range
Compatibility
Compatible with standard IGBT gate drive circuits
Application Areas
Power conversion
Motor drives
Welding equipment
Induction heating
Switched-mode power supplies
Product Lifecycle
Current product, no discontinuation planned
Replacements and upgrades available as technology evolves
Key Reasons to Choose
High performance and efficiency
Compact and easy to integrate
Reliable operation under harsh conditions
Compatibility with standard IGBT drive circuits
Suitable for a wide range of power conversion applications