STGP10NB60SFP - STMicroelectronics

Manufacturer Part Number

STGP10NB60SFP

Manufacturer

STMicroelectronics

Introduction

Discrete Semiconductor Product

Single Transistor IGBT (Insulated Gate Bipolar Transistor)

Product Features and Performance

RoHS3 Compliant

TO-220FP Packaging

PowerMESH Series

Operating Temperature: -55°C to 150°C (TJ)

Power Rating: 25W

Collector-Emitter Breakdown Voltage: 600V

Collector Current (Max): 23A

Collector-Emitter Saturation Voltage (Max): 1.75V @ 15V, 10A

Gate Charge: 33nC

Pulsed Collector Current: 80A

Switching Energy: 600μJ (on), 5mJ (off)

Turn-on/Turn-off Delay Time: 700ns/1.2μs

Product Advantages

High voltage and current rating

Low on-state voltage

Fast switching capability

Suitable for high-power applications

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 600V

Current Collector (Ic) (Max): 23A

Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 10A

Gate Charge: 33nC

Current Collector Pulsed (Icm): 80A

Switching Energy: 600μJ (on), 5mJ (off)

Td (on/off) @ 25°C: 700ns/1.2μs

Quality and Safety Features

RoHS3 Compliant

TO-220FP Packaging

Compatibility

Through Hole Mounting

Application Areas

High-power switching applications

Industrial motor drives

Power supplies

Inverters

Welding equipment

Product Lifecycle

This product is currently available and not nearing discontinuation.

Replacement or upgrade options may be available from STMicroelectronics.

Key Reasons to Choose This Product

High voltage and current rating for high-power applications

Low on-state voltage for efficient operation

Fast switching capability for high-speed applications

Robust and reliable design

Suitable for a wide range of industrial and power electronics applications