STGP10M65DF2 - STMicroelectronics

Manufacturer Part Number

STGP10M65DF2

Manufacturer

STMicroelectronics

Introduction

Discrete Semiconductor product

Single Transistor IGBT (Insulated Gate Bipolar Transistor)

Product Features and Performance

Trench Field Stop IGBT

650V Collector-Emitter Breakdown Voltage

20A Collector Current

2V Collector-Emitter Saturation Voltage @ 15V Gate, 10A Collector

96ns Reverse Recovery Time

28nC Gate Charge

40A Pulsed Collector Current

120μJ Turn-On, 270μJ Turn-Off Switching Energy

Product Advantages

Optimized for high-efficiency and high-frequency switching applications

Excellent conduction and switching performance

Compact TO-220 package

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 650V

Current Collector (Ic) (Max): 20A

Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A

Reverse Recovery Time (trr): 96ns

Gate Charge: 28nC

Current Collector Pulsed (Icm): 40A

Switching Energy: 120μJ (on), 270μJ (off)

Quality and Safety Features

RoHS3 Compliant

Operating Temperature Range: -55°C to 175°C

Compatibility

Through Hole Mounting (TO-220 Package)

Application Areas

High-efficiency and high-frequency switching applications

Power supplies, motor drives, induction heating, and other industrial applications

Product Lifecycle

This is an active product with no indication of discontinuation

Key Reasons to Choose This Product

Excellent conduction and switching performance for high-efficiency operation

Compact and reliable TO-220 package

Wide operating temperature range

RoHS3 compliance for environmental safety