Manufacturer Part Number
STGP14NC60KD
Manufacturer
STMicroelectronics
Introduction
Discrete Semiconductor Product
Single Transistor IGBT
Product Features and Performance
Supports high power up to 80W
Collector-Emitter Breakdown Voltage up to 600V
Collector Current up to 25A
Low On-State Voltage Drop (Vce(on) max. 2.5V)
Fast Switching Capabilities (Td(on/off) 22.5ns/116ns)
Low Gate Charge (34.4nC)
Product Advantages
Excellent power handling capability
High voltage and current ratings
Fast switching performance
Efficient power conversion
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 600V
Collector Current (Max): 25A
On-State Voltage Drop (Vce(on)): 2.5V
Reverse Recovery Time (trr): 37ns
Gate Charge: 34.4nC
Quality and Safety Features
RoHS3 Compliant
TO-220 Package for Reliable Thermal Management
Compatibility
Suitable for a variety of power conversion and control applications
Application Areas
Power Supplies
Motor Drives
Inverters
Uninterruptible Power Supplies (UPS)
Industrial Controls
Product Lifecycle
Currently available
No information on discontinuation or replacements
Key Reasons to Choose This Product
High power handling capability
Wide voltage and current range
Fast, efficient switching performance
Reliable thermal management in TO-220 package
Compliance with RoHS3 standards