Manufacturer Part Number
STGP20NC60V
Manufacturer
STMicroelectronics
Introduction
High-performance Insulated Gate Bipolar Transistor (IGBT) for industrial and consumer applications.
Product Features and Performance
600V breakdown voltage
60A collector current
200W power rating
Fast switching with low gate charge
Low on-state voltage drop
Wide operating temperature range (-55°C to 150°C)
Excellent short-circuit capability
Product Advantages
Optimized for high-efficiency power conversion
Robust design for reliable operation
Compact TO-220 package for easy integration
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 600V
Collector Current (Max): 60A
Power Dissipation: 200W
Gate Charge: 100nC
Switching Times (ton/toff): 31ns/100ns
Quality and Safety Features
RoHS3 compliant
Designed for industrial and consumer applications
Compatibility
Suitable for a wide range of power electronic systems and applications
Application Areas
Motor drives
Welding equipment
Induction heating
Uninterruptible power supplies (UPS)
Household appliances
Product Lifecycle
Current product, no discontinuation planned
Replacement or upgrade options available if required
Key Reasons to Choose This Product
High-performance IGBT with excellent efficiency and reliability
Wide operating temperature range for versatile applications
Compact and easy-to-integrate package
Robust design for demanding power conversion systems
Cost-effective solution for industrial and consumer applications