STGP20H60DF - STMicroelectronics

Manufacturer Part Number

STGP20H60DF

Manufacturer

STMicroelectronics

Introduction

Discrete Semiconductor Product

Transistors IGBTs Single

Product Features and Performance

Trench Field Stop IGBT

600V Collector-Emitter Breakdown Voltage

40A Collector Current

2V Collector-Emitter Saturation Voltage @ 15V, 20A

90ns Reverse Recovery Time

115nC Gate Charge

80A Pulsed Collector Current

209J Turn-On, 261J Turn-Off Switching Energy

5ns Turn-On, 177ns Turn-Off Delay Time

Product Advantages

Optimized performance for high-power, high-frequency applications

Improved energy efficiency and reliability

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 600V

Current Collector (Ic) (Max): 40A

Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A

Reverse Recovery Time (trr): 90ns

Gate Charge: 115nC

Current Collector Pulsed (Icm): 80A

Switching Energy: 209J (on), 261J (off)

Td (on/off) @ 25°C: 42.5ns/177ns

Quality and Safety Features

RoHS3 Compliant

Operating Temperature Range: -55°C to 175°C

Compatibility

TO-220 Package

Through Hole Mounting

Application Areas

High-power, high-frequency applications such as motor drives, power supplies, and inverters

Product Lifecycle

Current product offering, no information on discontinuation or replacements

Several Key Reasons to Choose This Product

Optimized performance for high-power, high-frequency applications

Improved energy efficiency and reliability

Robust 600V voltage rating and 40A current handling capability

Fast switching characteristics with low switching losses

Compact and reliable TO-220 package