Manufacturer Part Number
STGP30V60DF
Manufacturer
STMicroelectronics
Introduction
High-performance Insulated Gate Bipolar Transistor (IGBT)
Product Features and Performance
Trench Field Stop IGBT technology
Voltage rating up to 600V
Current rating up to 60A
Low on-state voltage drop (Vce(on)) of 2.3V
Fast switching speed with short turn-on/off time (45ns/189ns)
High power handling capability up to 258W
Product Advantages
Improved energy efficiency
Compact design
Reliable performance
Key Technical Parameters
Collector-Emitter Breakdown Voltage (BVCES): 600V
Collector Current (Ic): 60A
Collector-Emitter Saturation Voltage (Vce(on)): 2.3V
Reverse Recovery Time (trr): 53ns
Quality and Safety Features
RoHS3 compliant
Operating temperature range: -55°C to 175°C
Compatibility
Through-hole mounting (TO-220 package)
Application Areas
Industrial motor drives
Power supplies
Uninterruptible Power Supplies (UPS)
Welding equipment
Induction heating
Product Lifecycle
Current production, no plans for discontinuation
Replacement and upgrade options available
Key Reasons to Choose
High-performance IGBT with excellent efficiency and reliability
Wide operating temperature range
Robust design for industrial applications
Ease of integration with through-hole mounting