STGP6NC60HD - STMicroelectronics

Manufacturer Part Number

STGP6NC60HD

Manufacturer

STMicroelectronics

Introduction

This is a high-performance IGBT (Insulated Gate Bipolar Transistor) transistor designed for a variety of power electronics applications.

Product Features and Performance

600V Collector-Emitter Voltage

15A Collector Current

56W Power Dissipation

Fast Switching Speed with 12ns Turn-On and 76ns Turn-Off Time

Low Vce(on) of 2.5V at 15V Gate Voltage and 3A Collector Current

21ns Reverse Recovery Time

Product Advantages

Efficient Power Conversion

Reliable and Robust Design

Optimized for High-Frequency Switching

Suitable for Various Power Applications

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 600V

Current Collector (Ic) (Max): 15A

Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 3A

Reverse Recovery Time (trr): 21ns

Gate Charge: 13.6nC

Current Collector Pulsed (Icm): 21A

Switching Energy: 20J (on), 68J (off)

Td (on/off) @ 25°C: 12ns/76ns

Quality and Safety Features

RoHS3 Compliant

Operating Temperature Range: -55°C to 150°C

Compatibility

TO-220 Package

Suitable for various power electronics applications

Application Areas

Switched-Mode Power Supplies (SMPS)

Motor Drives

Inverters

Welding Equipment

Induction Heating

Industrial Power Conversion

Product Lifecycle

This product is currently in active production and is not nearing discontinuation.

Replacement or upgrade options may be available from the manufacturer.

Key Reasons to Choose This Product

Excellent power handling capability with 600V voltage and 15A current ratings

Fast switching performance with low turn-on and turn-off times

Low on-state voltage drop and energy losses for efficient power conversion

Robust and reliable design for industrial and high-power applications

Wide operating temperature range for versatile use in various environments

RoHS3 compliance for environmentally-friendly applications