Manufacturer Part Number
STGP30V60F
Manufacturer
STMicroelectronics
Introduction
High-performance IGBT transistor for power electronics applications
Product Features and Performance
Trench Field Stop IGBT technology
Maximum Collector-Emitter Voltage: 600V
Maximum Collector Current: 60A
Low Collector-Emitter Saturation Voltage: 2.3V @ 15V, 30A
Fast Switching: 45ns turn-on, 189ns turn-off
High Switching Energy: 383J turn-on, 233J turn-off
Wide Operating Temperature Range: -55°C to 175°C
Product Advantages
High power density
Fast switching capability
Low conduction losses
Robust design
Key Technical Parameters
IGBT Type: Trench Field Stop
Collector-Emitter Breakdown Voltage: 600V
Collector Current (Max): 60A
Collector Current (Pulsed): 120A
Gate Charge: 163nC
Switching Energy: 383J (on), 233J (off)
Quality and Safety Features
RoHS3 compliant
TO-220 package
Suitable for high-reliability power electronics applications
Compatibility
Through-hole mounting
Compatible with standard gate drive circuits
Application Areas
Power converters
Inverters
Motor drives
UPS systems
Welding equipment
Industrial equipment
Product Lifecycle
Currently in production
No plans for discontinuation
Replacement or upgrade options available
Key Reasons to Choose This Product
High power handling capability
Excellent switching performance
Low conduction losses
Robust and reliable design
Suitable for a wide range of power electronics applications