STGP30M65DF2 - STMicroelectronics

Manufacturer Part Number

STGP30M65DF2

Manufacturer

STMicroelectronics

Introduction

Discrete Semiconductor Products

Transistors IGBTs Single

Product Features and Performance

RoHS3 Compliant

TO-220 package

Trench Field Stop IGBT technology

Wide operating temperature range: -55°C to 175°C

High power handling capability: Up to 258W

Fast switching speed: Td(on/off) = 31.6ns/115ns

High current capability: Up to 60A continuous, 120A pulsed

Product Advantages

Optimized for high-power, high-efficiency applications

Robust design for reliable performance

Compact and easy to integrate

Key Technical Parameters

Collector-Emitter Breakdown Voltage: 650V

Collector Current (Continuous/Pulsed): 60A/120A

Collector-Emitter Saturation Voltage: 2V @ 15V, 30A

Reverse Recovery Time: 140ns

Gate Charge: 80nC

Switching Energy: 300J (on), 960J (off)

Quality and Safety Features

RoHS3 compliant

Designed for high reliability and safety

Compatibility

Compatible with standard IGBT gate drivers

Application Areas

Switching power supplies

Motor drives

Induction heating

Welding equipment

Uninterruptible power supplies (UPS)

Product Lifecycle

Currently in production

No immediate plans for discontinuation

Replacements and upgrades may be available in the future

Key Reasons to Choose This Product

Optimized for high-power, high-efficiency applications

Robust and reliable design

Fast switching speed and high current capability

Compact and easy to integrate

RoHS3 compliance for environmental responsibility