Manufacturer Part Number
STGW15H120DF2
Manufacturer
STMicroelectronics
Introduction
High-voltage, high-power insulated-gate bipolar transistor (IGBT) for industrial applications
Product Features and Performance
Trench field stop IGBT technology
Low conduction and switching losses
Fast switching speed
High current handling capability
Suitable for high-power, high-frequency switching applications
Product Advantages
Excellent electrical performance
Robust and reliable design
Optimized for industrial applications
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 1200 V
Current Collector (Ic) (Max): 30 A
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 15A
Reverse Recovery Time (trr): 231 ns
Gate Charge: 67 nC
Current Collector Pulsed (Icm): 60 A
Switching Energy: 380J (on), 370J (off)
Td (on/off) @ 25°C: 23ns/111ns
Quality and Safety Features
RoHS3 compliant
Suitable for high-temperature operations (-55°C ~ 175°C)
Compatibility
TO-247-3 package
Compatible with various industrial applications
Application Areas
High-power, high-frequency switching applications
Industrial motor drives
Power supplies
Welding equipment
Induction heating
Uninterruptible power supplies (UPS)
Product Lifecycle
Currently available
No discontinuation or end-of-life announced
Several Key Reasons to Choose This Product
Excellent electrical performance with low conduction and switching losses
Fast switching speed for high-frequency applications
High current handling capability for demanding industrial uses
Robust and reliable design for harsh environments
Optimized for a wide range of industrial applications
STGP5H60DFSTMicroelectronicsTRENCH GATE FIELD-STOP IGBT, H S