STGW10M65DF2 - STMicroelectronics

Manufacturer Part Number

STGW10M65DF2

Manufacturer

STMicroelectronics

Introduction

Discrete Semiconductor Product - Transistors - IGBTs - Single

Product Features and Performance

Trench Field Stop IGBT

650V Collector-Emitter Breakdown Voltage

20A Collector Current

115W Power Dissipation

-55°C to 175°C Operating Temperature

96ns Reverse Recovery Time

28nC Gate Charge

40A Pulsed Collector Current

120μJ Turn-On, 270μJ Turn-Off Switching Energy

19ns Turn-On, 91ns Turn-Off Delay Times

Product Advantages

Optimized for high-frequency and high-efficiency applications

Improved conduction and switching performance

Robust design with high ruggedness

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 650V

Current Collector (Ic) (Max): 20A

Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A

Reverse Recovery Time (trr): 96ns

Gate Charge: 28nC

Current Collector Pulsed (Icm): 40A

Switching Energy: 120μJ (on), 270μJ (off)

Td (on/off) @ 25°C: 19ns/91ns

Quality and Safety Features

ROHS3 Compliant

TO-247-3 Package

Through Hole Mounting

Compatibility

Can be used in a variety of high-frequency and high-efficiency power electronic applications

Application Areas

Motor drives

Switched-mode power supplies

Inverters

Welding equipment

Induction heating

And other high-power, high-frequency applications

Product Lifecycle

No information on discontinuation or availability of replacements/upgrades

Key Reasons to Choose This Product

Optimized performance for high-frequency and high-efficiency applications

Robust design with high ruggedness

Excellent conduction and switching characteristics

Wide operating temperature range

RoHS3 compliance for environmental responsibility