Manufacturer Part Number
STGW20V60DF
Manufacturer
STMicroelectronics
Introduction
Discrete Semiconductor Product
Transistors IGBTs Single
Product Features and Performance
RoHS3 Compliant
TO-247-3 Package
Operating Temperature: -55°C ~ 175°C (TJ)
Power Rating: 167 W
IGBT Type: Trench Field Stop
Collector-Emitter Breakdown Voltage (Max): 600 V
Collector Current (Max): 40 A
Collector-Emitter Saturation Voltage (Max): 2.2 V @ 15 V, 20 A
Reverse Recovery Time: 40 ns
Gate Charge: 116 nC
Pulsed Collector Current (Max): 80 A
Switching Energy: 200 J (on), 130 J (off)
Turn-on/off Delay Time @ 25°C: 38 ns / 149 ns
Product Advantages
High power handling capability
Fast switching and low losses
Reliable and robust design
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 600 V
Current Collector (Ic) (Max): 40 A
Vce(on) (Max) @ Vge, Ic: 2.2 V @ 15 V, 20 A
Reverse Recovery Time (trr): 40 ns
Gate Charge: 116 nC
Current Collector Pulsed (Icm): 80 A
Switching Energy: 200 J (on), 130 J (off)
Td (on/off) @ 25°C: 38 ns / 149 ns
Quality and Safety Features
RoHS3 Compliant
Compatibility
Through Hole Mounting Type
Application Areas
Power electronics
Industrial motor drives
Welding equipment
Uninterruptible power supplies (UPS)
Induction heating
Servo drives
Product Lifecycle
Currently in production
No known discontinuation plans
Replacements and upgrades available
Key Reasons to Choose This Product
High power handling capability up to 167 W
Fast switching and low losses for improved efficiency
Reliable and robust design for industrial applications
Wide operating temperature range of -55°C to 175°C
RoHS3 compliance for environmental compatibility
Through-hole mounting for easy integration
STGW20IH125DFSTMicroelectronics