Manufacturer Part Number
STGW25H120F2
Manufacturer
STMicroelectronics
Introduction
High-power insulated-gate bipolar transistor (IGBT)
Designed for industrial applications
Product Features and Performance
Trench Field Stop IGBT technology
Low conduction and switching losses
High blocking voltage capability up to 1200V
High current handling up to 50A
Fast switching with low gate charge of 100nC
Capable of handling high surge currents up to 100A
Product Advantages
Optimized for efficiency in high-power applications
Compact and robust design
Reliable and durable performance
Key Technical Parameters
Collector-Emitter Breakdown Voltage (max): 1200V
Collector Current (max): 50A
Collector-Emitter Saturation Voltage (max): 2.6V
Turn-on/Turn-off Delay Time: 29ns/130ns
Switching Energy (on/off): 600J/700J
Quality and Safety Features
RoHS3 compliant
Operating temperature range: -55°C to 175°C
Compatibility
TO-247-3 package
Suitable for industrial applications
Application Areas
Motor drives
Power supplies
Welding equipment
Induction heating
Uninterruptible power supplies (UPS)
Product Lifecycle
Current production model
Replacement or upgrade options available
Key Reasons to Choose This Product
High-performance IGBT with optimized efficiency
Reliable and durable design for industrial applications
Versatile compatibility and wide temperature range
Robust surge current handling capability
Fast switching with low gate charge
STGW30N120KDSTMicroelectronics