Manufacturer Part Number
STGW25M120DF3
Manufacturer
STMicroelectronics
Introduction
High-power Insulated-Gate Bipolar Transistor (IGBT) device
Product Features and Performance
Trench field-stop IGBT technology
Low conduction and switching losses
Fast switching speed
High reliability and ruggedness
High-power density design
Product Advantages
Optimized for high-power industrial applications
Suitable for inverters, converters, and motor drives
Improved energy efficiency
Compact and lightweight design
Key Technical Parameters
Voltage Rating: 1200V
Current Rating: 50A
Low Vce(on): 2.3V @ 15V, 25A
Fast Reverse Recovery Time: 265ns
High Switching Energy: 850J (on), 1.3mJ (off)
Wide Operating Temperature Range: -55°C to 175°C
Quality and Safety Features
RoHS3 compliant
Robust TO-247-3 package
High reliability and ruggedness
Compatibility
Suitable for a wide range of industrial applications
Application Areas
Inverters
Converters
Motor drives
Industrial power electronics
Product Lifecycle
Current product, no discontinuation planned
Replacement or upgrade parts available
Key Reasons to Choose This Product
Excellent performance and efficiency
Robust and reliable design
Compact and lightweight
Suitable for a wide range of industrial applications
Optimized for high-power applications
