Manufacturer Part Number
STGW30V60DF
Manufacturer
STMicroelectronics
Introduction
High-performance trench field-stop insulated-gate bipolar transistor (IGBT)
Product Features and Performance
High voltage rating of 600V
High current rating of 60A
Low on-state voltage (Vce(on)) of 2.3V at 15V gate voltage and 30A collector current
Fast switching with short turn-on (45ns) and turn-off (189ns) delay times
Robust trench field-stop IGBT technology
High power density of 258W
Product Advantages
Excellent efficiency and low power losses
High reliability and ruggedness
Suitable for high-power, high-frequency switching applications
Key Technical Parameters
Collector-Emitter Breakdown Voltage (BVCES): 600V
Collector Current (IC): 60A
Collector-Emitter Saturation Voltage (VCE(on)): 2.3V
Reverse Recovery Time (trr): 53ns
Gate Charge (Qg): 163nC
Quality and Safety Features
RoHS3 compliant
TO-247-3 package for reliable operation and thermal management
Compatibility
Suitable for a wide range of high-power, high-frequency switching applications
Application Areas
Motor drives
Inverters
Uninterruptible power supplies (UPS)
Switch-mode power supplies
Welding equipment
Induction heating
Product Lifecycle
Currently in active production
No known plans for discontinuation
Replacement or upgrade options available from the manufacturer
Key Reasons to Choose This Product
Excellent efficiency and low power losses for improved system performance
Fast switching and low on-state voltage for high-frequency, high-power applications
Robust and reliable trench field-stop IGBT technology for long-term operation
Wide range of compatible applications for design flexibility
Availability of replacement and upgrade options from the manufacturer
STGW30NB60HDSTMicroelectronics