Manufacturer Part Number
STGW30NC60W
Manufacturer
STMicroelectronics
Introduction
High-performance IGBT (Insulated Gate Bipolar Transistor)
Designed for high-power industrial applications
Product Features and Performance
Maximum power: 200 W
Maximum collector-emitter voltage: 600 V
Maximum collector current: 60 A
Low on-state voltage: Vce(on) = 2.5 V @ 15 V, 20 A
Fast switching speed: Turn-on time 29.5 ns, Turn-off time 118 ns
High surge current capability: 150 A
Wide operating temperature range: -55°C to 150°C
Product Advantages
High power density
Excellent reliability and ruggedness
Efficient performance in high-power applications
Key Technical Parameters
Package: TO-247-3
RoHS compliance: RoHS3 Compliant
Gate charge: 102 nC
Switching energy: 305 μJ (on), 181 μJ (off)
Quality and Safety Features
Robust design for industrial applications
Complies with RoHS3 environmental standards
Compatibility
Suitable for a wide range of high-power industrial applications
Application Areas
Motor drives
Power supplies
Welding equipment
Induction heating
Uninterruptible power supplies (UPS)
Renewable energy systems
Product Lifecycle
This product is currently in active production and availability.
No known plans for discontinuation or replacement at this time.
Key Reasons to Choose This Product
High power handling capability
Excellent switching performance
Robust and reliable design for industrial use
Wide operating temperature range
RoHS3 compliance for environmental safety