Manufacturer Part Number
STGW45HF60WD
Manufacturer
STMicroelectronics
Introduction
High-performance insulated-gate bipolar transistor (IGBT)
Designed for a wide range of industrial and power electronics applications
Product Features and Performance
High blocking voltage of 600V
High collector current of 70A
Low on-state voltage drop of 2.5V at 30A, 15V gate voltage
Fast switching with turn-on time of 30ns and turn-off time of 145ns
Low reverse recovery time of 55ns
High power handling capability of 250W
Product Advantages
Excellent efficiency and reliability
Robust design for industrial environments
Optimized for high-frequency switching applications
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 600V
Collector Current (Max): 70A
On-state Voltage Drop: 2.5V @ 30A, 15V
Reverse Recovery Time: 55ns
Gate Charge: 160nC
Pulsed Collector Current: 150A
Switching Energy (on/off): 300J/330J
Quality and Safety Features
RoHS3 compliant
Suitable for harsh industrial environments with operating temperature range of -55°C to 150°C
Compatibility
TO-247-3 package
Compatible with a wide range of industrial and power electronics applications
Application Areas
Motor drives
Power supplies
Inverters
Welding equipment
Induction heating
Uninterruptible power supplies (UPS)
Product Lifecycle
Currently available
No plans for discontinuation
Replacement or upgrade options may be available in the future
Key Reasons to Choose This Product
Excellent performance and reliability
Robust design for industrial applications
Optimized for high-frequency switching
Wide range of compatible applications
Availability and ongoing support from the manufacturer
