Manufacturer Part Number
STGW45NC60VD
Manufacturer
STMicroelectronics
Introduction
High-performance IGBT transistor
Product Features and Performance
600V voltage rating
90A collector current rating
Low Vce(on) of 2.4V at 15V, 30A
Fast reverse recovery time of 45ns
High power handling of 270W
Capable of high-speed switching with short turn-on and turn-off times
Product Advantages
Excellent efficiency and power density
Robust design for reliable performance
Suitable for high-power industrial applications
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 600V
Current Collector (Ic) (Max): 90A
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Reverse Recovery Time (trr): 45ns
Gate Charge: 126nC
Current Collector Pulsed (Icm): 220A
Switching Energy: 333J (on), 537J (off)
Td (on/off) @ 25°C: 33ns/178ns
Quality and Safety Features
ROHS3 compliant
TO-247 long leads package for reliable connection
Compatibility
Through-hole mounting for easy integration
Application Areas
Power conversion
Motor drives
Welding equipment
Induction heating
Uninterruptible power supplies (UPS)
Product Lifecycle
Current generation product, no known discontinuation plans
Replacements and upgrades available as technology evolves
Several Key Reasons to Choose This Product
High power handling and efficiency for demanding applications
Robust and reliable design for industrial use
Fast switching capabilities for high-speed power conversion
Wide operating temperature range of -55°C to 150°C
Easy to integrate with through-hole mounting
STGW45HF60WDISTMicroelectronicsIGBT 600V 70A 250W TO247