Manufacturer Part Number
STGWA50M65DF2
Manufacturer
STMicroelectronics
Introduction
Discrete Semiconductor Product
Single Transistor IGBT
Product Features and Performance
Trench Field Stop IGBT
650V Collector-Emitter Breakdown Voltage
80A Collector Current Capability
1V Collector-Emitter Saturation Voltage
162ns Reverse Recovery Time
150nC Gate Charge
150A Pulsed Collector Current
Product Advantages
Optimized for high power, high frequency applications
Suitable for high efficiency power conversion systems
Improved switching performance and low conduction losses
Key Technical Parameters
TO-247 Long Leads Package
Through Hole Mounting
-55°C to 175°C Operating Temperature Range
375W Power Rating
Quality and Safety Features
RoHS3 Compliant
Compatibility
Compatible with standard IGBT gate driver circuits
Application Areas
Power Supplies
Motor Drives
Renewable Energy Systems
Industrial Equipment
Product Lifecycle
Currently available product
No immediate plans for discontinuation
Replacement parts and upgrades available
Key Reasons to Choose this Product
High power handling capability
Excellent switching performance
Low conduction losses
Robust and reliable design
Compatibility with standard IGBT gate drivers
Suitable for a wide range of high-power applications