Manufacturer Part Number
STGWA80H65FB
Manufacturer
STMicroelectronics
Introduction
High-power trench field stop insulated-gate bipolar transistor (IGBT)
Designed for use in high-power industrial applications
Product Features and Performance
High power density and efficiency
Low conduction and switching losses
Fast switching speed
High current capability up to 120A
Voltage rating up to 650V
Wide operating temperature range from -55°C to 175°C
Product Advantages
Improved energy efficiency in high-power applications
Compact design for space-constrained applications
Reliable and robust performance
Key Technical Parameters
IGBT Type: Trench Field Stop
Collector-Emitter Breakdown Voltage: 650V
Collector Current: 120A
Collector-Emitter Saturation Voltage (Vce(on)): 2V @ 15V, 80A
Gate Charge: 414nC
Switching Energy: 2.1mJ (on), 1.5mJ (off)
Turn-On/Turn-Off Delay Time: 84ns/280ns
Quality and Safety Features
RoHS3 compliant
TO-247 long leads package for improved thermal performance
Designed and manufactured to high quality standards
Compatibility
Compatible with various high-power industrial applications, such as motor drives, power supplies, and inverters
Application Areas
Suitable for use in high-power industrial applications, including motor drives, power supplies, and inverters
Product Lifecycle
This product is currently available and not nearing discontinuation
Replacement or upgraded models may become available in the future as technology advances
Several Key Reasons to Choose This Product
High power density and efficiency for improved energy savings
Fast switching speed and low losses for enhanced system performance
Reliable and robust design for long-term operation in harsh environments
Compact package for space-constrained applications
Wide operating temperature range for versatile use