Manufacturer Part Number
STGWA75H65DFB2
Manufacturer
STMicroelectronics
Introduction
Discrete Semiconductor Product
Single Transistor IGBT
Product Features and Performance
Trench Field Stop IGBT
650V Collector-Emitter Breakdown Voltage
115A Collector Current (Max)
2V Collector-Emitter Saturation Voltage @ 15V, 75A
88ns Reverse Recovery Time
207nC Gate Charge
225A Pulsed Collector Current
428mJ Turn-On Switching Energy, 1.05mJ Turn-Off Switching Energy
28ns Turn-On Delay, 100ns Turn-Off Delay
Product Advantages
High power density
Fast switching
Low conduction losses
Key Technical Parameters
TO-247-3 Package
-55°C to 175°C Operating Temperature Range
357W Maximum Power
Quality and Safety Features
ROHS3 Compliant
Compatibility
Compatible with standard IGBT gate drive circuits
Application Areas
Power conversion
Motor drives
Renewable energy systems
Industrial equipment
Product Lifecycle
Currently available
No discontinuation or replacement plans announced
Key Reasons to Choose This Product
High power handling capability
Fast switching performance
Low conduction and switching losses
Proven reliability in industrial applications
Compatibility with standard IGBT gate drive circuits